Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile

This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting doping profile. In manufacturing process SJ MOSFET using multilayer epitaxial deposition (MED), position concentration each Boron bubble can be adjusted designing different profiles to adjust resistance upper half P-pillar. A higher P-pillar slow down sweep out speed hole carriers when body diode is turned off, thus resulting in a smoother current reducing rate (dir/dt) from peak zero. The simulation results show that (Irrm) proposed devices decreased 5% 3%, respectively, compared conventional SJ. Additionally, softness factor (S) increased 64% 55%, respectively. Furthermore, this study also demonstrates trade-off relationship between static with adjustable profile, providing guideline for actual application scenarios.